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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1011 DESCRIPTION *With TO-220 package *Complement to type 2SC2344 APPLICATIONS *High voltage switching , *Audio frequency power amplifier; *100W output predriver applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -180 -160 -6 -1.5 -3.0 25 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ,RBE= IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-0.5A; IB=-50mA IC=-10mA ; VCE=-5V VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-0.3A ; VCE=-5V IC=-50mA ; VCE=-10V IE=0; f=1MHz ; VCB=-10V 60 MIN -160 -180 -6 2SA1011 TYP. MAX UNIT V V V -0.5 -1.5 -10 -10 200 100 30 V V A A MHz pF Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=-0.5A ;IB1=-IB2=-50mA VCC=20V; RL=40 0.29 0.48 0.19 s s s hFE Classifications D 60-120 E 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1011 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1011 4 |
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